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Synthesis Gas Producing Device
Patent Number: JP5306102
Publication date: 1993-11-19
Inventor(s): Uematsu Masaji, Yamamoto Kazuo, Hasegawa Toshiaki, Mochida Susumu
Applicant(s): Mitsubishi Gas Chem Co Inc, Nippon Furnace Kogyo Kaisha Ltd
Requested Patent: JP5306102
Application Number: JP19920195876 19920701
Priority Number(s):
IPC Classification: C01B3/34; B05B1/02; C01B3/02
EC Classification:
Equivalents: JP2709243B2


PURPOSE: To uniformly mix a primary reformed gas and a burner combustion gas, to stably obtain a partially burned gas and to efficiently produce a synthesis gas in the synthesis gas producing device having a primary reforming part to steam-reform hydrocarbons and a secondary reforming part to reform the partially burned gas and utilizing the secondary reformed gas as the heat source for the primary reforming part.

CONSTITUTION: A nozzle 10 for injecting a primary reformed gas and a burner injection gas nozzle 9 for injecting an oxygen-contg. gas for partial combustion are arranged vertically to the center axis of a combustion chamber, the primary reformed gas is injected against the side wall, and the burner injection gas is injected toward the nozzle 10 in the axial direction of the combustion chamber.